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Net carrier density present near the silicon-oxide interface may constitute an important acceptance requirement
Note: This Standard has been purposely restricted to 100 mm (4 in
SEMI MF1617-0304 (technical revision)
orgで，そして2007年11月にCD-ROMで入手可能となる。初版は1999年2月発行，前版は2005年11月に発行された。
Failure mechanisms
MF118800 - SEMI MF1188 - Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline StdPbc-1113 Net carrier density present nearThis Test Method covers the determination of the interstitial oxygen content of single crystal silicon by measurement of an infrared absorption band at room temperature, using a short baseline drawn between 1040 cm1 and 1160 cm1 to reduce the uncertainties due to perturbations in the IR absorption at the end point regions of longer baselines that arise from effects other than absorption by interstitial oxygen. Use of the short baseline results in
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