P02900 - SEMI P29 - Specification for Characteristics Specific to Attenuated Phase Shift Masks and Masks Blanks Revision:SEMI P29-0997 - Superseded 各前方サイドドメイン上の光学カセットセンシングホール （1）

各前方サイドドメイン上の光学カセットセンシングホール　（1）

1-0703 (technical revision)

B：形状測定を使用した段差法

and in some cases the identity of microscopic surface defects and contaminants that may appear on the wetted surfaces

This Test Method is used to validate three main performance characteristics of RF generators in order to support the following SEMI E113 specifications:

P02900 - SEMI P29 - Specification for Characteristics Specific to Attenuated Phase Shift Masks and Masks Blanks Revision:SEMI P29-0997 - Superseded 各前方サイドドメイン上の光学カセットセンシングホール （1）This Specification covers the characteristics specific to attenuated phase shift masks and mask blanks. Referenced SEMI Standards SEMI P1 Specification for Hard Surface Photomask Substrates SEMI P2 Specification for Chrome Thin Films for Hard Surface Photomasks SEMI P22 Guideline for Photomask Defect Classification and Size Definition SEMI P28 Specification for Overlay Metrology Test Patterns for Integrated Circuit Manufacture