M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging Revision:SEMI M93-0624 - Current 2 Final assemblies should be

2  Final assemblies should be evaluated according to the criteria of SEMI S2 for environmental

SEMI E120 — Specification for the Common Equipment Model (CEM)

SEMI E79-1106 (technical revision)

半導体と電子デバイスの製造者で用いる製造技術は，高密度化および高複雑化の方向に進化し続けている。高集積化，内部接続の高階層化および素子間・導体間分離の微細化にともなって，電界に起因する問題に対する敏感性は増加している。この文書は，既存の静電気電荷の移動技術に加え，電界に関するより緻密な調査を通じて損傷問題に取り組むための推奨事項を提供している。

without defining specific performance skill levels or classification of job levels nor detailed content for any level of the tier structure

M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging Revision:SEMI M93-0624 - Current 2 Final assemblies should beBasal plane dislocations (BPDs) are detrimental for devices manufactured on 4H SiC substrates, especially for bipolar devices for power electronics. Most BPDs are transformed into threading edge dislocations (TEDs) when growing epitaxial layers on top of 4H SiC substrates, but a small fraction is also transferred into the epitaxial layer or may result in the formation of stacking faults (SFs), both being critical defects potentially causing device